Snežana Golubović

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Datum kreiranja: 28.01.2014.

Snežana Golubović

Dodatne informacije

Lični podaci
Datum rođenja: 13. Septembar 1957.
Mesto rođenja: Trstenik
Obrazovanje
Fakultet: Filozofski fakultet Nis
Odsek / Grupa / Smer: PMO
Godina diplomiranja: 1981
Spisak publikacija
Monografije i poglavlja u monografijama:
e.1.       S. Golubović, S. Đorić-Veljković, I. Manić V. Davidović, “Efekti naprezanja oksida gejta VDMOS tranzistora snage“, Monografija, Elektronski fakultet Niš, 2006.

e.2.    D. Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, "Implications of Negative BiasTemperature Instability in Power MOS Transistors " in Micro Electronic and Mechanical Systems, ISBN: 978-953-307-027-8, edited by Kenichi Takahata, IN-TECH Press, Boca Raton, pp. 19.319-19.342 (2009)

http://www.intechopen.com/books/show/title/micro-electronic-and-mechanical-systems

e.3.      N. Stojadinović, I. Manić, D. Danković, S. Djorić-Veljković, V. Davidović, A. Prijić, S. Golubović, and, Z. Prijić, "Negative Bias Temperature Instability in Thick Gate Oxides for Power MOS Transistors" in Bias Temperature Instability for Devices and Circuits, edited by Tibor Grasser, Springer Science+Business Media New York, pp. 533-559 (2014) ISBN: 978-1-4614-7908-6 (Print) 978-1-4614-7909-3 DOI 10.1007/978-1-4614-7909-3

http://link.springer.com/book/10.1007/978-1-4614-7909-3

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Knjige i udžbenici:
i.1.            M. Pejović, S. Golubović, “Zbirka rešenih zadataka iz fizike”, Izdavačka jedinica Univerziteta u Nišu, 1987.

i.2.            M. Pejović, S. Golubović, D. Župac, "Zbirka rešenih zadataka", Prosveta, Niš, 1989.

i.3.            M. Pejović, S. Golubović, D. Župac, T. Jovanović, G. Ristić, "Opšti kurs fizike - Zbirka rešenih zadataka", Naučna Knjiga, Beograd, 1992.

i.4.            M. Pejovic, G. Ristić, S. Golubović, “Rešeni zadaci za pripremu prijemnog ispita iz fizike“, Elektronski fakultet Niš, Edicija – publikacije, Niš, 2000.

i.5.            M.   Pejović, S. Golubović, G. Ristić, A. Jakšić, “Opšti kurs fizike - Zbirka rešenih zadataka“ (I izdanje), Elektronski fakultet Niš, Edicija – pomocni udžbenici, Niš, 2003.

i.6.            M. Pejovic, G. Ristić, S. Golubović, “Rešeni zadaci za pripremu prijemnog ispita iz fizike“, Elektronski fakultet Niš, Edicija – publikacije, Niš, 2005.
Radovi u časopisima sa IMPACT faktorom:
a.1.       M. Pejović, Đ.A. Bošan, S.M. Golubović, “ Generation of Metastables in Nitrogen Glow Discharge”, Acta Phys. Hungarica, Vol. 59 (3-4), pp. 273-278 (1986).

a.2.       S. Dimitrijev, S. Golubović, D. Župac, M. Pejović, and N. Stojadinović “Analysis of Gamma-Radiation Induced Instability Mechanisms in CMOS Transistors”, Solid-State Electronics, Vol. 32 (5), pp. 349-353 (1989).

a.3.       S. Golubović, M. Pejović, S. Dimitrijev, and N. Stojadinović, “UV-Radiation Annealing of the Electron- and X-Irradiation Damaged CMOS Transistors”, Physica Status Solidi (a), Vol. 129, pp. 569-575 (1992).

a.4.       M. Pejović, G. Ristić, and S. Golubović, “A Comparison between Thermal and UV-Radiation Annealing of Gamma-Irradiated NMOS Transistors”, Physica Status Solidi (a), Vol. 140 (5), pp. K53-K57 (1993).

a.5.       G. Ristić, S. Golubović, and M. Pejović, “PMOS Dosimeter for Dosimetric Application”, Electronics Letters, 29, p. 1644 (1993).

a.6.       G. Ristić, S. Golubović, and M. Pejović, “PMOS Dosimeter with Two-Layer Gate Oxide Operated at Zero and Negative Bias”, Electronics Letters, Vol. 30, p. 295(1994).

a.7.       M. Pejović, S. Golubović, G. Ristić, and M. Odalović, “Annealing of Gamma-Irradiated Al-Gate NMOS Transistors”, Solid-State Electronics, Vol. 37 (1), pp. 215-216 (1994).

a.8.       M. Pejović, S. Golubović, G. Ristić, and M. Odalović, “Temperature and Gate-Bias Effect on Gamma-Irradiated Al-Gate Metal-Oxide-Semiconductor Transistors”, Jpn. J. Appl. Phys., Vol. 33 (1), pp. 27-29 (1994).

a.9.       N. Stojadinović, S. Djorić, S. Golubović, and V. Davidović, “Separation of Irradiation Induced Gate Oxide Charge and Interface Trap effects in power VDMOSFETs”, Electronics Letters, Vol. 30, pp. 1192-1193 (1994).

a.10.     S. Golubović, G. Ristić, M. Pejović, and S. Dimitrijev, “The Role of Interface Traps in Rebound Mechanisms”, Physica Status Solidi (a), Vol. 143, pp. 333-338 (1994).

a.11.     N. Stojadinović, S. Golubović, S. Djorić, and S. Dimitrijev, “Analysis of Gamma-Irradiation Induced Degradation Mechanisms in Power VDMOSFETs”, Microelectron. Reliab., Vol. 35, pp. 587-609 (1995).

a.12.     N. Stojadinović, M. Pejović, S. Golubović, G. Ristić, V. Davidović, and S. Dimitrijev, “ Effect of Radiation-Induced Oxide-Trapped Charge on Mobility”, Electronics Letters, Vol. 31, pp. 497-498 (1995).

a.13.     G. Ristić, S. Golubović, and M. Pejović, “P-Channel Metal Oxide Semiconductor Dosimeter Fading Dependencies on Gate Bias and Oxide Thickness”, Appl. Phys. Lett., Vol. 66, pp. 88-89 (1995).

a.14.     M. Pejović, S. Golubović, and G. Ristić, “Temperature - Induced Rebound in Al-Gate NMOS Transistors”, IEE Proc.-Circuits Devices Syst., Vol. 142, (6) pp. 413-416 (1995).

a.15.     G. Ristić, S. Golubović, M. Pejović, "Sensitivity and fading of pMOS dosimeters with thick gate oxide", Sensors and Actuators: A. Physical, Vol. A 51, pp. 153-158 (1996).

a.16.     N. Stojadinović, S. Golubović, V. Davidovic, S. Djorić-Veljković and S. Dimitrijev, “Modeling of Radiation-Induced Mobility Degradation in MOSFETs”, Physica Status Solidi (a) Vol. 169, pp. 63-66 (1998).

a.17.     S. Golubović, S. Djorić-Veljković, V. Davidović and N. Stojadinović, “Modeling of Gamma-Irradiation and Lowered Temperature Effects in Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors”, Jpn. J. Appl. Phys., Vol. 38 (1), pp. 4699-4702 (1999).

            N. Stojadinović, S. Golubović, S. Djorić-Veljković, and V. Davidović, “Correction to “Modeling of Gamma-Irradiation and Lowered Temperature Effects in Power Vertical Double-Diffused Metal-Oxide-Semiconductor Transistors””, Jpn. J. Appl. Phys., Vol. 40 (3A), p. 1530 (2001).

а.18      N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Dimitrijev, “Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs”, Microelectron. Reliab., Vol. 41, pp. 1373-1378 (2001).

а.19 .    Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, “Radiation Hardening of Power VDMOSFETs Using Electrical Stress”, Electronics Letters, Vol. 38, p.431 (2002).

а.20.     Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Dimitrijev, “Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs”, Microelectron. Reliab., Vol. 42, pp.669-677 (2002).

а.21.     . Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubović, S. Dimitrijev, “Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs”, Microelectron. Reliab., Vol. 42, pp. 1465-1468 (2002).

а.22.     Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, “Effects of burn-in stressing on radiation response of power VDMOSFETs”, Microelectron. J., Vol. 33, pp. 899-905. (2002).

а.23.     Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, “Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs”, Microelectron. Reliab., Vol. 43, pp. 1455-1460 (2003).

а.24.     Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, S. Dimitrijev, “Effects of electrical stressing in power VDMOSFETs”, Microelectron. Reliab., Vol. 45, pp. 115-122 – invited paper (2005).

а.25.     Stojadinović, D. Danković, S. Djorić-Veljković, V. Davidović, I. Manić, S. Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs”, Microelectron. Reliab., Vol. 45, pp. 1343-1348 (2005).

a.26.     Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, and S. Dimitrijev, "Electrical Stressing Effects in Commercial Power VDMOSFETs", IEE Proc. - Circuits, Devices and Systems, vol. 153, no. 3, pp. 281-288 (2006) ISSN: 1350-2409, DOI: 10.1049/ip-eds:20050050

http://digital-library.theiet.org/IET-CDS                                                                                                            M23

a.27.     Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and  N. Stojadinović
"NBT Stress-Induced Degradation and Lifetime Estimation in p-channel Power VDMOSFETs", Microelectronics Reliability, vol. 46, no. 9-11, pp. 1828-1833 (2006) ISSN: 0026-2714, DOI: 10.1016/j.microrel.2006.07.077

http://www.sciencedirect.com/science/journal/00262714/46/9-11                                                      M22

a.28. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, N. Stojadinović, "Negative Bias Temperature Instabilities in Sequentialy Stressed and Annealed in p-Channel Power VDMOSFETs", Microelectronics Reliability, vol. 47, no. 9-11, pp. 1400 - 1405 (2007) ISSN: 0026-2714, DOI: 10.1016/j.microre1.2007.07.022

http://linkinghub.elsevier.com/retrieve/pii/S0026271407002910                                           M22

a.29. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubović, N. Stojadinović, "Mechanisms of Spontaneous Recovery in DC Gate Bias Stressed Power VDMOSFETs", IET Circuits, Devices and Systems, vol. 2, no. 2, pp. 213-221 (2008) ISSN: 1751-858X, DOI: 10.1049/iet-cds:20070173      http://digital-library.theiet.org/IET-CDS             M23

a.30.     Davidović, N. Stojadinović, D. Dankovi ć, S. Golubović, I. Manić, S. Djorić-Veljković, and S. Dimitrijev, "Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power Vertical Double–Diffused Metal-Oxide-Semiconductor Transistors", Japanese J. Appl. Phys, vol. 47, pp. 6272-6276 (2008) ISSN: 1347-4065 (online) 0021-4922 (print) DOI: 10.1143/JJAP.47.6272   http://jjap.jsap.jp/link?JJAP/47/6272/                M22

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a.31. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, and N. Stojadinović, "Negative Bias Temperature Instability in n-Channel Power VDMOSFETs", Microelectronics  Reliability, vol. 48, no. 8-9, pp. 1313 - 1317 (2008) ISSN: 0026-2714, DOI: 10.1016/j.microrel.2008.06.015

http://linkinghub.elsevier.com/retrieve/pii/S0026271408002023                                                        M22

a.32. Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, "Implications of Negative BiasTemperature Instability in Power MOS Transistors " in Micro Electronic and Mechanical Systems, ISBN: 978-953-307-027-8, edited by Kenichi Takahata, IN-TECH Press, Boca Raton, pp. 19.319-19.342 (2009)

http://www.intechopen.com/books/show/title/micro-electronic-and-mechanical-systems                                                                                                                                                    M14

a.33. Manić, D. Danković, S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, "Effects of Low Gate Bias Annealing in NBT Stressed p-Channel Power VDMOSFETs", Microelectronics Reliability, vol. 49, no. 9-11, pp. 1003 - 1007 (2009) ISSN: 0026-2714, DOI: 10.1016/j.microrel.2009.07.010

http://linkinghub.elsevier.com/retrieve/pii/S0026271409002418                         M22

a.34. Stojadinović, D. Danković, I. Manić, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, and Z. Prijić, "Threshold Voltage Instabilities in p-Channel Power VDMOSFETs Under Pulsed NBT Stress", Microelectronics Reliability, vol. 50, no. 9-11, pp. 1278 - 1282 (2010) ISSN: 0026-2714, DOI: 10.1016/j.microrel.2010.07.122

http://linkinghub.elsevier.com/retrieve/pii/S0026271410003951                                         M22

a.35. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, "Annealing of Radiation-Induced Defects in Burn-In Stressed Power VDMOSFETs", Nuclear Technology & Radiation Protection, vol. 26, no. 1, pp. 18 - 24 (2011) ISSN: 1451-3994, DOI: 10.2298/NTRP1101018D

http://www.doiserbia.nb.rs/issue.aspx?issueid=1435                                                         M23

a.36. Manić, D. Danković, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, Z. Prijić, and N. Stojadinović, "NBTI Related Degradation and Lifetime Estimation in p-Channel Power VDMOSFETs Under the Static and Pulsed NBT Stress Conditions", Microelectronics Reliability, vol. 51, no. 9-11, pp. 1540 - 1543 (2011) ISSN: 0026-2714, DOI: 10.1016/j.microrel.2011.06.004 http://www.sciencedirect.com/science/journal/00262714/51/9-11                                 M23

a.37. Danković, I. Manić, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, Z. Prijić, and N. Stojadinović, "Effects of Static And Pulsed Negative Bias Temperature Stressing on Lifetime in p-Channel Power VDMOSFETs", Informacije MIDEM-Journal of Microelectronics Electronic Components and Materials, vol. 43, iss. 1, pp. 58-66 (2013)

http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=Z22j57CeMP5MaBOhIgI&page=1&doc=2                                                           M23

a.38. S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, "Comparison of Gamma-Radiation and Electrical Stress Influences on Oxide and Interface Defects in Power VDMOSFETs", Nuclear Technology & Radiation Protection, vol. 28, no. 4, pp. 18-24 (2013)

a.39. S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, and N. Stojadinović, "Annealing Influence on Recovery of Electrically Stressed Power Vertical Double-Diffused Metal Oxide Semiconductor Transistors", Japanese Journal of Applied Physics, vol. 54, iss. 6, art. no. 064101-1-7 (2015) ISSN: 0021-4922 DOI: 10.7567/JJAP.54.064101 http://dx.doi.org/10.7567/JJAP.54.064101 http://iopscience.iop.org/1347-4065/54/6/064101/   M23

a.40 D. Danković, I. Manić, A. Prijić, S. Djorić-Veljković, V. Davidović, N. Stojadinović, Z. Prijić, S. Golubović, "Negative Bias Temperature Instability in P-Channel Power VDMOSFETs: Recoverable Versus Permanent Degradation", Semiconductor Science and Technology, vol. 30, p. 105009 (2015) ISSN: 0268-1242 DOI: 10.1088/0268-1242/30/10/105009 http://iopscience.iop.org/article/10.1088/0268-1242/30/10/105009/meta;jsessionid=52BBCB92FFAF8242695F1FB5776FF642.c1.iopscience.cld.iop.org                     M21

a.42.    D. Danković, N. Stojadinović, Z. Prijić, I. Manić, V. Davidović, A. Prijić, S. Djorić-Veljković, S. Golubović, "Analysis of Recoverable and Permanent Components of Threshold Voltage Shift in NBT Stressed P-Channel Power VDMOSFET", Chinese Physics B, vol. 24, no. 10, pp. 106601-1-9 (2015) ISSN: 1674-1056 DOI: 10.1088/1674-1056/24/10/106601 http://iopscience.iop.org/article/10.1088/1674-1056/24/10/106601/pdf                              M22

a.41.    V. Davidović, D. Danković, A. Ilić, I. Manić, S. Golubović, S. Djorić-Veljković, Z. Prijić, N. Stojadinović, "NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors", IEEE Transactions on Nuclear Science, vol. 63, no. 2, pp. 1268-1275 (2016) ISSN: 0018-9499, DOI:10.1109/TNS.2016.2533866 https://www.scopus.com/record/display.uri?eid=2-s2.0-84964290783&origin=resultslist&sort=plf-f&src=s&sid=9C53698C32920FCD5B1F0419F25B7C87.53bsOu7mi7A1NSY7fPJf1g%3a70&sot=autdocs&sdt=autdocs&sl=17&s=AU-ID%287006249553%29&relpos=0&citeCnt=0&searchTerm=                                                                                  M21

a.43. V. Davidović, D. Danković, A. Ilić, I. Manić, S. Golubović, S. Djorić-Veljković, Z. Prijić, A. Prijić, and N. Stojadinović, "Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors", Japanese Journal of Applied Physics, vol. 57, pp. 044101-1-044101-10, (2018) ISSN: 0021-4922 DOI: 10.7567/JJAP.57.044101

https://doi.org/10.7567/JJAP.57.044101                                                                                 M23

a.44. D. Danković, I. Manić, A. Prijić, V. Davidović, Z. Prijić, S. Golubović, S. Djorić-Veljković, A. Paskaleva, D. Spassov, N. Stojadinović, "A review of pulsed NBTI in P-channel power VDMOSFETs", Microelectronics Reliability, vol. 82, pp. 28 - 36 (2018) (invited paper) ISSN: 0026-2714, DOI: 10.1016/j.microrel.2018.01.003

https://doi.org/10.1016/j.microrel.2018.01.003                                                                       M22

a.45. N. Stojadinović, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Stankovic, A. Prijić, Z. Prijić, I. Manić, D. Danković, "NBTI and irradiation related degradation mechanisms in power VDMOS transistors", Microelectronics Reliability, vol. 88-90, pp. 135-141 (2018) ISSN: 0026-2714, DOI: 10.1016/j.microrel.2018.07.138 (invited paper)

http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=E1QTGVy93fvPoOxorcn&page=1&doc=1                                           M22

a.46. Danijel Danković, Vojkan Davidović, Snežana Golubović, Sandra Veljković, Nikola Mitrović, Snežana Djorić-Veljković, “Radiation and Annealing Related Effects in NBT Stressed P-Channel Power VDMOSFETs”, Microelectronics Reliability, vol. XX, no. XX, pp. XXX-XXX (2021). ISSN: 0026-2714, DOI: 10.1016/j.microrel.2021.114273.                                                                                              M23
Radovi u ostalim časopisima:
b.1.       M. Pejović, D. Zlatanović, A. Živković, S. Golubović, “Primena nagrizanja plazmom u proizvodnji integrisanih kola”, Informacije SSED, 3, str. 64-73 (1985).

b.2.       Pavlović, I. Manić, and S. Golubović, “Effects of gamma-irradiation on electrical characteristics of power VDMOS transistors”, Facta Universitatis (Phys., Chem. And Techn.), Vol. 2, pp. 223-233 (2002).

b.3.    Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, S. Dimitrijev, "Effects of Gate Bias Stressing in Power VDMOSFETs", Serbian Journal of Electrical Engineering, vol. 1, pp. 89-101 (2003)

b.4.      Danijel. Danković, I. Manić, V. Davidović, Aneta Prijić, S. Djorić-Veljković, S. Golubović, Zoran Prijić, N. Stojadinović, "Lifetime Estimation in NBT-Stressed P-Channel Power VDMOSFETs", Facta Universitatis: Series Automatic Control and Robotics, vol. 11, no. 1, pp. 15-23 (2012) ISSN 1820-6417        http://facta.junis.ni.ac.rs/acar/acar201201/acar20120102.html

b.5.   I. Manić, D. Danković, V. Davidović, A. Prijić, S. Djorić-Veljković, S. Golubović, Z. Prijić, N. Stojadinović, "Effects of Pulsed Negative Bias Temperature Stressing in P-Channel Power VDMOSFETs", Facta Universitatis, Series: Electronics and Energetics, vol. 29, no. 3, pp. 49-60 (2016) (invited paper)   ISSN: 0353-3670     http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/1288                                     M24

b.6.   V. Davidović, D. Danković, S. Golubović, S. Djorić-Veljković, I. Manić, Z. Prijić, A. Prijić, N. Stojadinović, "NBT Stress and Radiation Related Degradation and Underlying Mechanisms in Power VDMOSFETs", Facta Universitatis, Series: Electronics and Energetics, vol. 31, no. 3, pp. 367-388 (2018) (invited paper)   ISSN: 0353-3670

http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=E4SDh4A8j5JbiM8lO33&page=1&doc=2                                                        M24
Radovi na naučnim skupovima međunarodnog značaja:
c.1.       S.Golubović, S. Dimitrijev, D. Župac, M. Pejović and N. Stojadinović, “Gamma-Radiation Effects in CMOS Transistors”, Proc. 17^th European Solid State Device Research Conference (ESSDERC 87), Bologna, Italy, 1987, pp. 725-728.

c.2.       S. Golubović, S. Dimitrijev, D. Župac, M. Pejović and N. Stojadinović, “Effect of UV-Radiation Annealing on X-Ray Induced Damage in CMOS Transistors”, Proc. 17^th Yugoslav Conference on Microelectronics (MIEL 89), Niš 1989, Yugoslavia, pp. 833-839.

c.3.       N. Stojadinović, S. Djorić, S. Golubović, and S. Dimitrijev “Analysis of Gamma-Irradiation Induced Degradation Mechanisms in Power VDMOSFETs: Changes in Gate Oxide charge and Interface Traps”, Proc. 2^nd Serbian Conference on Microelectronics and Optoelectronics (MIOPEL 93), Niš 1993, Yugoslavia, pp. 67-72.

c.4.       S. Dimitrijev, S. Djorić, S. Golubović, and N. Stojadinović “Analysis of Gamma-Irradiation Induced Degradation Mechanisms in Power VDMOSFETs: Creation of Oxide Charge and Interface Traps”, Proc. 2^nd Serbian Conference on Microelectronics and Optoelectronics (MIOPEL 93), Niš 1993, Yugoslavia, pp. 73-79.

c.5.       N. Stojadinović, S. Golubović, V. Davidović, S. Djorić-Veljković and S. Dimitrijev,”Modeling of Radiation-Induced Mobility Degradation in MOSFETs”, Proc. 21^st International Conference on Microelectronics (MIEL 97), Niš 1997, Yugoslavia, pp. 335-356.

c.6.       V. Davidović, S. Djorić-Veljković, S. Golubović, and N. Stojadinović, ”Room Temperature Relaxation of Irradiated and Cooled Power VDMOS Transistors”, Proc. 6^th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 97), Krakow 1999, Poland, pp. 291-294.

c.7.       S. Djorić-Veljković, S. Golubović, V. Davidović, and N. Stojadinović, ”Power VDMOS TransistorsResponse to Lowered Temperature Conditions”, Proc. 22^nd International Conference on Microelectronics (MIEL 2000), Niš 2000, Yugoslavia, pp. 383-386.

c.8.       S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, ”Radiation Effects in Low-Temperature Stressed Power VDMOS Transistors”, Proc. 23^rd International Semiconductor Conference (CAS 2005), Sinaia 2000, Romania, pp. 337-340.

c.9.    N. Stojadinović, D. Danković, S. Djorić-Veljković, V. Davidović, I. Manić, and S.Golubović

"Negative Bias Temperature Instability Mechanisms in p-Channel Power VDMOSFETs"
1. 16^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘05), Bordeaux (France), October 2005, (pp. 1343-1348), also Microelectronics Reliability 2005, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2005.07.018
http://www.sciencedirect.com/science/article/pii/S002627140500168X                                          M33

c.10.     I. Manić, Z. Pavlović, S. Golubović, S. Djorić-Veljković, V. Davidović, N. Stojadinović, “Effects of g-Irradiation on Drain Current and Transconductance in Power VDMOS Transistors”, Proc. 8^th Int. Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2001), Zakopane, June 2001, pp. 333-338.

c.11.     N. Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, “Effects of elevated-temperature bias stressing on radiation response in power VDMOSFETs”, Proc. 8^th Int. Symposium on the Physical & Failure Analysis of Integrated Circuits (IPFA 2001), Singapore, July 2001, pp. 243-248.

c.12.     N. Stojadinović, S. Djorić-Veljković, V. Davidović, I. Manić, S. Golubović, “Gamma-irradiation effects in power MOSFETs for applications in communication satellites”, Proc. 5^th Int. Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS 2001), Niš, September 2001, pp.395-400.

c.13.     N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Dimitrijev, “Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs”, Proc. 12^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2001), Bordeaux, October 2001, pp.1373-1378; objavljeno u Microelectronics Reliability - a.1.

c.14.     N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Dimitrijev, “Effects of positive gate bias stressing and subsequent recovery treatment in power VDMOSFETs”, Proc. 4^th IEEE Int. Caracas Conference on Devices, Circuits, and Systems (ICCDCS 2002), Aruba, April 2002, pp. DO50-1 ‑ DO50-8 - invited paper.

c.15.     N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubović, S. Dimitrijev, “Spontaneous recovery of positive gate bias stressed power VDMOSFETs, Proc. 23^rd Int. Conference on Microelectronics (MIEL 2002), Niš, May 2002, pp.717-722.

c.16.     N. Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, “Effects of positive gate bias stress on radiation response in power VDMOSFETs”, Proc. 23^rd Int. Conference on Microelectronics (MIEL 2002), Niš, May 2002, pp.723-726.

c.17.     N. Stojadinović, S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, “Radiation response of elevated-temperature bias stressed power VDMOSFETs”, Proc. 6^th Int. Seminar on Power Semiconductors (ISPS 2002), Prague, September 2002, pp. 69-74.

c.18.     N. Stojadinović, I. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubović, S. Dimitrijev, “Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs”, Proc. 13^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2002), Rimini, October 2002, pp. 1465-1468; objavljeno u Microelectronics Reliability – a.4.

c.19.     I. Manić, S. Djorić-Veljković, V. Davidović, D. Danković, S. Golubović, S. Dimitrijev, N. Stojadinovic, “Effects of negative gate bias stressing in thick gate oxides for power VDMOSFETs”, Proc. 12^th Workshop on Dielectrics in Microelectronics (WoDiM 2002), Grenoble, November 2002, pp. 41-44.

c.20.     V. Davidović, I. Manić, S. Djorić-Veljković, D. Danković, S. Golubović, S. Dimitrijev, N. Stojadinovic, “Effects of negative gate bias stressing in power VDMOSFETs”, Proc. 7^th International Symposium on Microelectronics Technologies and Microsystems (MTM 2003), Sozopol, September 2003, pp. 150-155.

c.21.     S. Djorić-Veljković, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, “Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs”, Proc. 14^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2003), Bordeaux, October 2003, pp. 1455-1460; objavljeno u Microelectronics Reliability - a.7.

c.22.     N. Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, S. Dimitrijev, “Effects of electrical stressing in power VDMOSFETs”, Proc. 2003 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2003), Hong Kong, December 2003, pp. 291-296 – invited paper

c.23.     S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, N. Stojadinović, “Burn-in stressing effects on post-irradiation annealing response of power VDMOSFETs”, Proc. 24^th Int. Conference on Microelectronics (MIEL 2004), Niš, May 2004, pp. 701-704.

c.24.     N. Stojadinović, I. Manić, V. Davidović, D. Danković, S. Djorić-Veljković, S. Golubović, S. Dimitrijev, “Electrical stressing effects in power VDMOSFETs”, Proc. 7^th Int. Seminar on Power Semiconductors (ISPS’04), Prague, September 2004, pp. 109-114.

c.25.     N. Stojadinović, D. Danković, S. Djorić-Veljković, V. Davidović, I. Manić, S. Golubović, “Negative bias temperature instability mechanisms in p-channel power VDMOSFETs”, Proc. 16^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 05), Bordeaux, October 2005, pp. 1343-1348; objavljeno u Microelectronics Reliability - a.9.

c.26.     V. Davidović, N. Stojadinović, D. Danković, S. Golubović, I. Manić, S. Djorić-Veljković, S. Dimitrijev, “Turn-Around of Threshold Voltage in Gate Bias Stressed p-Channel Power VDMOS Transistors”, 6^th Int. Seminar on Power Semiconductors (ISPS 06), accepted for presentation.

c.27.     I. Manić, S. Djorić-Veljković V. Davidović, D. Danković, S. Golubović, N. Stojadinović, “Spontaneous recovery in DC gate bias stressed power VDMOSFETs”, Proc. 25^th Int. Conference on Microelectronics (MIEL 06), Beograd, May 2006, pp. 639-644.

c.28.     D. Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, N. Stojadinović, “Lifetime estimation in NBT stressed p-channel power VDMOSFETs”, Proc. 25^th Int. Conference on Microelectronics (MIEL 06), Beograd, May 2006, pp. 645-648.

c.29. V. Davidović, N. Stojadinović, D. Danković, S. Golubović, I. Manić, S. Djorić-Veljković, and S. Dimitrijev, "Turn-around of Threshold Voltage in Gate Bias Stressed p-Channel Power VDMOS Transistors", Proc. 8^th International Seminar on Power Semiconductors (ISPS‘06), Prague, September 2006 (pp. 85-89)                                                               M33

c.30. D. Danković, I. Manić, S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, "NBT Stress-Induced Degradation and Lifetime Estimation in p-Channel Power VDMOSFETs", Proc. 17^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘06), (Germany), October 2006 (pp. 1828-1833), also Microelectronics Reliability 2006, ISSN: 0026-2714, DOI: 10.1016/j.microrel.2006.07.077

http://www.sciencedirect.com/science/article/pii/S0026271406002447                             M33

c.31.     N. Stojadinović, D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, and S. Golubović, "Impact of Negative Bias Temperature Instabilities on Lifetime in p-channel Power MOSFETs", Proc. 8^th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services (TELSIKS‘07), Niš (Serbia), September 2007 (pp. 275-282) (invited paper) ISBN: 978-86-85195-54-9 (IEEE), 1-4244-1467-9 (FEE)

http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=W1Le4kG6KOb2mmPCDfL&page=2&doc=14                                               M31

c.32. D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, N. Stojadinović, "Negative Bias Temperature Instabilities in Sequentialy Stressed and Annealed in p-Channel Power VDMOSFETs", Proc. 18^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF ‘07), Bordeaux (France), October 2007 (pp. 1400-1405), also Microelectronics Reliability 2007, ISSN: 0026-2714, DOI:10.1016/j.microrel.2007.07.022

http://www.sciencedirect.com/science/article/pii/S0026271407002910                            M33

                         M33

c.33. D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, and N. Stojadinović, "New Approach in Estimating the Lifetime in NBT Stressed p-Channel Power VDMOSFETs", Proc. 26^th International Conference on Microelectronics (MIEL‘08), Niš, May 2008 (pp. 599-602) ISBN: 987-1-4244-1881-7, ISSN: 2159-1660, DOI: 10.1109/ICMEL.2008.4559357

http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4559357                                   M33

c.34. D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, and N. Stojadinović, "Negative Bias Temperature Sress and Annealing Effects in p-Channel Power VDMOSFETs", Proc. 9^th International Seminar on Power Semiconductors (ISPS‘08), Prague, August 2008 (pp. 127-132) ISBN 978-80-01-04139-0 DOI: 10.1049/ic:20080225

http://digital-library.theiet.org/getabs/servlet/GetabsServlet?prog=normal&id=IEESEM002008000002000127000001&idtype=cvips&gifs=yes&ref=no                                                              M33

c.35. D. Danković, I. Manić, V. Davidović, S. Djorić-Veljković, S. Golubović, and N. Stojadinović, "Negative Bias Temperature Instability in n-Channel Power VDMOSFETs", Proc. 19^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF‘08), Maastricht (Netherlands), September 2008 (pp. 1313-1317), also Microelectronics Reliability 2008, ISSN: 0026-2714, DOI:10.1016/j.microrel.2008.06.015

http://www.sciencedirect.com/science/article/pii/S0026271408002023                             M33

c.36. I. Manić, D. Danković, S. Djorić-Veljković, V. Davidović, S. Golubović, and N. Stojadinović, "Effects of Low Gate Bias Annealing in NBT Stressed p-Channel Power VDMOSFETs", Proc. 20^th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF’09), Arcachon, France, October 05-09 2009 (pp. 1003 - 1007), also Microelectronics Reliability2009, ISSN: 0026-2714

http://www.sciencedirect.com/science/article/pii/S0026271409002418                             M33

c.37. S. Djorić-Veljković, D. Danković, A. Prijić, I. Manić, V. Davidović, S. Golubović, Z. Prijić, and N. Stojadinović, "Degradation of p-channel Power VDMOSFETs under Pulsed NBT Stress", Proc. 27^th International Conference on Microelectronics (MIEL‘10), Niš, May 2010 (pp. 443-446) ISBN 978-1-4244-7200-0, DOI: 10.1109/MIEL.2010.5490448

http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5490448                                      M33

c.38. N. Stojadinović, D. Danković, I. Manić, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, Z. Prijić, "Threshold Voltage Instabilities in p-Channel Power VDMOSFETs Under Pulsed NBT Stress" Proc. 21^st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2010), Gaeta (Italy) October 2010, (pp. 1278-1282), also Microelectronics Reliability 2010, ISSN: 0026-2714

http://www.sciencedirect.com/science/article/pii/S0026271410003951                             M33

c.39. I. Manić, D. Danković, A. Prijić, V. Davidović, S. Djorić-Veljković, S. Golubović, and Z. Prijić, N. Stojadinović, "NBTI Related Degradation and Lifetime Estimation in p-Channel Power VDMOSFETs Under the Static and Pulsed NBT Stress Conditions", Proc. 22^nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2011), Bordeaux (France) 3-7 October 2011,(pp. 1540-1543), also Microelectronics Reliability 2011, ISSN: 0026-2714

http://www.sciencedirect.com/science/article/pii/S0026271411001946                              M33

c.40. S. Djorić-Veljković, V. Davidović, D. Danković, I. Manić, S. Golubović, and N. Stojadinović, "Recovery Treatment Effects on Gamma Radiation Response in Electrically Stressed Power VDMOS Transistors", Proc. 29^th International Conference on Microelectronics (MIEL‘14), Belgrade, May 2014 (pp. 293-296) DOI: 10.1109/MIEL.2014.6842146, ISBN 978-1-4799-5295-3

http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6842146&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D6842146                                   M33

c.41. V. Davidović, A. Paskaleva, D. Spassov, E. Guziewicz, T. Krajewski, S. Golubović, S. Đorić-Veljković, I. Manić, D. Danković, N. Stojadinović, "Electrical and Charge Trapping Properties of HfO2/Al2O3 Multilayer Dielectric Stacks", Proc. 30^th International Conference on Microelectronics, (MIEL 2017) Niš, October 2017 (pp. 143-146) DOI: 10.1109/MIEL.2017.8190088, ISBN: 978-1-5386-2562-0/17

http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=E4SDh4A8j5JbiM8lO33&page=1&doc=6                                                    M33

c.42. D. Danković, I. Manić, N. Stojadinović, Z. Prijić, S. Đorić-Veljković, V. Davidović, A. Prijić, A. Paskaleva, D. Spassov, S. Golubović, "Modelling of Threshold Voltage Shift in Pulsed NBT Stressed p-Channel Power VDMOSFETs", Proc. 30^th International Conference on Microelectronics, (MIEL 2017) Niš, October 2017 (pp. 147-150) DOI: 10.0.4.85/MIEL.2017.8190089, ISBN: 978-1-5386-2562-0/17

http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=E4SDh4A8j5JbiM8lO33&page=1&doc=7                                                  M33

c.43. N. Stojadinović, S. Djorić-Veljković, V. Davidović, S. Golubović, S. Stankovic, A. Prijić, Z. Prijić, I. Manić, D. Danković, "NBTI and irradiation related degradation mechanisms in power VDMOS transistors", 29^th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Aalborg, Denmark, October 01-05, 2018 (pp. 135-141) DOI: 10.1016/j.microrel.2018.07.138 (invited paper)

http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=1&SID=E1QTGVy93fvPoOxorcn&page=1&doc=1                                           M31

c.44.

Danijel Danković, Nikola Mitrović, Sandra Veljković, Vojkan Davidović, Snežana Djorić Veljković, Zoran Prijić, Albena Paskaleva, Dencho Spassov, Snežana Golubović, “A Review of the Electric Circuits for NBTI Modeling in p-Channel Power VDMOSFETs”, Proc. 32nd International Conference on Microelectronics (MIEL 2021), Niš, Serbia, 12-14 September 2021, pp. 55-62, (invited paper), ISBN: 978-166544528-3, DOI: 10.1109/MIEL52794.2021.9569030, https://ieeexplore.ieee.org/document/9569030               М31

c.45. Sandra Veljković, Nikola Mitrović, Snežana Djorić Veljković, Vojkan Davidović, Ivica Manić, Snežana Golubović, Albena Paskaleva, Dencho Spassov, Zoran Prijić, Aneta Prijić, Srboljub Stanković, Danijel Danković, “Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors” Proc. 32nd International Conference on Microelectronics (MIEL 2021), Niš, Serbia, 12-14 September 2021, pp. 345-350, ISBN: 978-166544528-3, DOI: 10.1109/MIEL52794.2021.9569154, https://ieeexplore.ieee.org/document/9569154                                                                                   М33

c.46. Danijel Danković, Vojkan Davidović, Snežana Golubović, Sandra Veljković, Nikola Mitrović, Snežana Djorić-Veljković, “Radiation and Annealing Related Effects in NBT Stressed P-Channel Power VDMOSFETs”, Proc 32nd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2021), Bordeaux, France, 4-7 October, 2021, pp XX-XX.                                   М33

c.47. Nikola Mitrović, Sandra Veljković, Snežana Đorić-Veljković, Vojkan Davidović, Snežana Golubović, Danijel Danković, Zoran Prijić “Methods for modeling of NBTS induced threshold voltage shift in p-channel power VDMOSFETs”, Advanced Ceramics and Applications IX, Belgrade, Serbia, 20-21. September 2021, p 53, ISBN 978-86-915627-8-6, http://www.serbianceramicsociety.rs/doc/aca01-10/aca9/ACA-IX-2021-Book-of-Abstracts.pdf                                                                                        М34

c.48. Sandra Veljković, Nikola Mitrović, Snežana Đorić-Veljković, Vojkan Davidović, Ivica Manić, Snežana Golubović, Danijel Danković, “Gate oxide degradation of electronic components due to irradiation and bias temperature stress”, Advanced Ceramics and Applications IX, Belgrade, Serbia, 20-21. September 2021, p 62, ISBN 978-86-915627-8-6, http://www.serbianceramicsociety.rs/doc/aca01-10/aca9/ACA-IX-2021-Book-of-Abstracts.pdf                                                                                                                      М34
Radovi na domaćim naučnim skupovima:
d.1.       M. Pejović, Đ. Bošan, S. Golubović, “Pobuđivanje metastabilnih stanja u azotu strujom pražnjenja”, Zbornik radova XVIII Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima, Ljubljana, 1982, pp. 145-150.

d.2.       M. Pejović, B. Mijović, Đ. Bošan, S. Golubović, "Električni proboj u plemenitim gasovima izazvan metastabilnim stanjima", Zbornik radova XXVII Jugoslovenske konferencije za ETAN, Struga, 1983, sveska V, pp. 375-382.

d.3.       M. Pejović, Đ. Bošan, S. Golubović, “Formiranje površine katode u gasnim diodama”, Zbornik radova XIX Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima, Ljubljana, 1982, pp. 145-150.

d.4.       M. Pejović, S. Golubović, B. Dimitrijević, "Katodno raspršavanje u argonu pri tinjavom pražnjenju", Zbornik radova XXVIII Jugoslovenske konferencije za ETAN, Split, 1986, sveska V, str. 229-236.

d.5.       M. Pejović, S. Golubović, M. Radović, “Uticaj termičke brzine metastabila na formiranje površine katode”, Zbornik radova XX Jugoslovenskog simpozijuma o elektronskim sastavnim delovima i materijalima, Ljubljana, 1984, pp. 79-83.

d.6.       M. Pejović, S. Golubović, B. Mijović, “Defekti u SiO₂ nastali tokom jonskog nagrizanja”, Zbornik radova XIV Jugoslovenskog simpozijuma o mikroelektronici, Beograd, 1986, pp. 259-266.

d.7.       M. Pejović, B. Dimitrijević, S. Golubović, "Formiranje električnog pražnjenja u gasovima na niskim pritiscima", Zbornik radova XXX Jugoslovenske konferencije za ETAN, Herceg-Novi, 1986, sveska X, pp. 99-106.

d.8.       G. Ristić, S. Golubović, M. Pejović, "Spontani oporavak ozračenih MOS tranzistora sa Al ‑ gejtom", Zbornik radova I srpske konferencije o mikroelektronici i optoelektronici (MIOPEL), Beograd, 19921. 2. 4., pp. 1 – 5.

d.9.       S. Golubović, G. Ristić, S. Đorić, N. Stojadinović, "Efekti gama-zračenja kod VDMOS tranzistora snage", Zbornik radova I srpske konferencije o mikroelektronici i optoelektronici (MIOPEL), Beograd, 1992, 1. 2. 5., pp. 1 – 5.

d.10.     G. Ristić, S. Golubović, M. Pejović, "Uticaj UV-zračenja i povišene temperature na radijacione defekte kod NMOS tranzistora", Zbornik radova XXXVII konferencije za ETAN, Beograd, 1993, sveska IX, pp. 99-104.

d.11.     S. Golubović, G. Ristić, M. Pejović, M. Odalović, "Termički oporavak NMOS tranzistora ozračenih gama zračenjem", Zbornik radova XXXVII konferencije za ETAN, sveska IX, Beograd, 1993, pp. 105-109.

d.12.     M. Pejović, G. Ristić, S. Golubović, "Oporavak ozračenih VDMOS tranzistora snage na povišenoj temperaturi", Zbornik radova XXXVIII konferencije za ETRAN, Niš, 1994, sveska IV, pp. 25-26.

d.13.     S. Đorić-Veljković, S. Golubović, V. Davidović, N. Stojadinović, “Uticaj različitih naprezanja na formirawe latentnih defekata tokom spontanog oporavka VDMOS tranzistora snage”, Zbornik radova XLIII konferencije za ETRAN, Vrnjačka Banja, 1999, sveska IV, pp. 139-142.

d.14.     S. Đorić-Veljković, V. Davidović, S. Golubović, N. Stojadinović, “Efekti niskih temperatura kod VDMOS tranzistora snage”, Zbornik radova XLIV konferencije za ETRAN, sveska IV, Soko Banja, 2000, pp. 185.

d.15.     S. Đorić-Veljković, N. Stojadinović, I. Manić, V. Davidović, S. Golubović, “Uticaj temperaturno-naponskih testova pouzdanosti na efekte zračenja kod VDMOS tranzistora snage“, Zbornik radova XLV jugoslovenske konferencije za ETRAN, Bukovička Banja, 2001, sveska IV, pp. 200-203.

d.16.     N. Stojadinović, I. Manić, S. Golubović, V. Davidović, S. Đorić-Veljković, S. Dimitrijev, “Efekti naprezanja pozitivnom polarizacijom na gejtu kod VDMOS tranzistora snage“ Zbornik radova XLV jugoslovenske konferencije za ETRAN, Bukovička Banja, 2001, sveska IV, pp. 204-207.

d.17.     N. Stojadinović, I. Manić, V. Davidović, S. Golubović, S. Đorić-Veljković, “Uticaj električnog naprezanja na otpornost VDMOS tranzistora snage na zračenje“, Zbornik radova XLVI konferencije za ETRAN, Banja Vrućica, 2002, sveska IV, str. 142-144.

d.18.     V. Davidović, S. Golubović, I. Manić, D. Danković, N. Stojadinović, S. Đorić-Veljković, S. Dimitrijev, “Primena tehnika za razdvajanje efekata naelektrisanja u oksidu i površinskih stanja kod VDMOS tranzistora snage“, Zbornik radova XLVI konferencije za ETRAN, Banja Vrućica, 2002, sveska IV, str. 145-148.

d.19.     I. Manić, V. Davidović, D. Danković, S. Golubović, N. Stojadinović, S. Đorić-Veljković, S. Dimitrijev, “Efekti naprezanja negativnom polarizacijom na gejtu kod VDMOS tranzistora snage”, Zbornik radova XLVII konferencije za ETRAN, Herceg Novi, 2003, sveska IV, str. 183-186.

d.20.     S. Đorić-Veljković, N. Stojadinović, I. Manić, V. Davidović, S. Golubović, “Uticaj temperaturno-naponskih testova pouzdanosti na efekte odžarivanja kod ozračenih VDMOS tranzistora snage“, Zbornik radova XLVII konferencije za ETRAN, Herceg Novi, 2003, sveska IV, pp. 187-190.

d.21.     D. Danković, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, S. Đorić-Veljković “Nestabilnosti p-kanalnog VDMOS tranzistora snage usled naponsko-temperaturnih naprezanja sa negativnom polarizacijom gejta“, Zbornik radova XLIX konferencije za ETRAN, Budva, 2005, sveska IV, pp. 129-132.

d.22.     V. Davidović, N. Stojadinović, D. Danković, S. Golubović, I. Manić, S. Đorić-Veljković, S. Dimitrijev, “Turn-around efekat napona praga kod PMOS tranzistora naprezanih pozitivnim naponima na gejtu“, Zbornik radova XLIX konferencije za ETRAN, Budva, 2005, sveska IV, pp. 125-128.

d.23.   D. Danković, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, S. Djorić-Veljković, "Life Time Evaluation in p-channel Power VDMOSFETs Under NBT Stress", Zbornik radova LII konferencije za ETRAN, Palić, 08-12 jun 2008 (str. MO1.2-1-4)   NAGRAĐEN

d.24.   D. Danković, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, S. Djorić-Veljković, "Instabilities in p-channel power VDMOSFETs Subjected to Multiple Negative Bias Temperature Stressing and Annealing", Zbornik radova LIII konferencije za ETRAN, Vrnjačka Banja, 15-18 jun 2009 (str. MO1.1-1-4)

d.25.   D. Danković, A. Prijić, I. Manić, V. Davidović, S. Golubović, N. Stojadinović, Z. Prijić, S. Djorić-Veljković, “Instabilities in p-Channel Power VDMOSFETs Subjected to Pulsed Negative Bias Temperature Stressing”, Zbornik radova LIV konferencije za ETRAN, Donji Milanovac, 7-10. jun 2010 (str. MO1.1-1-4)

d.26.   D. Danković, A. Prijić, I. Manić, V. Davidović, S. Golubović, Z. Prijić, N. Stojadinović, S. Đorić-Veljković “Određivanje perioda pouzdanog rada p-kanalnih VDMOS tranzistora snage podvrgnutih kontinualnim i impulsnim NBT naprezanjima”, Zbornik radova LVI konferencije za ETRAN, Zlatibor, 11-14 Jun 2012, str. MO1.1-1-4.

d.27.     S. Djorić-Veljković, I. Manić, V. Davidović, D. Danković, S. Golubović, N. Stojadinović, “Uticaj odžarivanja na oporavak električno naprezanih VDMOS tranzistora snage”, Zbornik radova LVII konferencije za ETRAN, Zlatibor, 3-6. jun 2013 (str. MO1.2-1-6) NAGRAĐEN http://etran.etf.rs/etran2013/Radovi/MO/MO1.2%20Djoric%20Manic%20Davidovic%20Dankovic%20Golubovic %20Stojadinovic%202013.pdf

d.28.   V. Davidović, A. Paskaleva, D. Spassov, E. Guziewicz, T. Krajewski, S. Đorić- Veljković, S. Golubović, I. Manić, D. Danković, N. Stojadinović, "Ispitivanje višeslojnih HfO2/Al2O3 višeslojnih struktura za memorijske komponente", Zbornik radova LXI konferencije za ETRAN, Kladovo, 5-8 Jun 2017 (MO1.1.1- MO1.1.4) (nagrađen rad) ISBN 978-86-7466-692-0

d.29.   Vojkan Davidović, Danijel Danković, Snežana Golubović, Snežana Đorić-Veljković, Ivica Manić, Zoran Prijić, Aneta Prijić, Ninoslav Stojadinović, "Elektrohemijski procesi kod p-kanalnih VDMOS tranzistora snage pri sukcesivnom NBT naprezanju i ozračivanju", Zbornik radova LXII konferencije za ETRAN, Palić, 11-14 Jun 2018 (MO1.1.1- MO1.1.4) ISBN 978-86-7466-752-1 https://www.etran.rs/common/Zbornik%20ETRAN%20IC%20ETRAN-18-final.pdf

d.30.    Snežana Đorić-Veljković, Vojkan Davidović, Danijel Danković, Snežana Golubović and Ninoslav Stojadinović, "Procedure merenja električnih karakteristika naprezanih p-kanalnih VDMOS tranzistora snage", Zbornik radova LXIII konferencije za ETRAN, Srebrno jezero, 03-06 jun 2019, str. 601-604. ISBN 978-86-7466-785-9 https://etran.rs/2019/Proceedings_IcETRAN_ETRAN_2019.pdf

d.31. Sandra Veljković, Nikola Mitrović, Snežana Đorić-Veljković, Vojkan Davidović, Snežana Golubović, Danijel Danković, “Efekti zračenja i odžarivanja kod naponsko temperaturno naprezanih p-kanalnih VDMOS tranzistora snage”, 65. конференцијa Društva za elektroniku, telekomunikacije, računarstvo, automatiku i nuklearnu tehniku - ETRAN, Etno selo Stanišići, Republika Srpska, 8-10 septembar, 2021, pp 321-325, ISBN 978‐86‐7466‐894‐8, https://www.etran.rs/2021/wp-content/uploads/2021/11/Zbornik_Proceedings_2021_web.pdf                                               М63

Poslednji put izmenjeno utorak, 14 decembar 2021 17:21

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Fizika, Mikroelektronika, Zracenje, VDMOS

Objavljeno u Elektronski fakultet

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Snežana Golubović

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