Dodatne informacije

• Lični podaci

• Mesto rođenja: Niš

• Obrazovanje

• Fakultet: Prirodno-matematički
• Odsek / Grupa / Smer: Fizika

• Spisak publikacija

• Monografije i poglavlja u monografijama:

  1. M.S. Andjelković, G.S. Ristić, "Physical aspects of radiofrequency radiation dosimetry", In book: Dosimetry in Bioelectromagnetics, CRC Press, Taylor&Francis Group, 119-138, 2017. https://doi.org/10.1201/9781315154572-7

• Knjige i udžbenici:

  1. M. M. Pejović, G. S. Ristić, S. M. Golubović, "Rešeni zadaci za pripremu prijemnog ispita iz fizike", Elektronski fakultet, Niš, 2000.

  
  

  2. M. M. Pejović, S. M. Golubović, G. S. Ristić, A. B. Jakšić, "Opšti kurs fizike - Zbirka rešenih zadataka", Elektronski fakultet, Niš, 2002.

  
  

  3. G. S. Ristić, "Osnovi kvantne i statističke fizike", Elektronski fakultet, Niš, 2008.

• Radovi u časopisima sa IMPACT faktorom:

  1. G. Ristić, S. Golubović, M. Pejović, "pMOS transistors for dosimetric application", Electronics Letters, 29 (18), 1644-1646, 1993. https://doi.org/10.1049/el:19931095

  
  

  2. M. Pejović, G. Ristić, S. Golubović, "A comparison between thermal annealing and UV -radiation annealing of g - irradiated NMOS transistors", Physica Status Solidi (a), 140, K53-K57, 1993. https://doi.org//10.1002/pssa.2211400140

  
  

  3. M. Pejović, S. Golubović, G. Ristić, M. Odalović, "Annealing of gamma-irradiated Al ‑ gate NMOS transistors", Solid-State Electronics, 37 (1), 215-216, 1994. https://doi.org/10.1016/0038-1101(94)90135-X

  
  

  4. M. Pejović, S. Golubović, G. Ristić, M. Odalović, "Temperature and gate bias effects on gamma - irradiated Al ‑ gate metal ‑ oxide ‑ semiconductor transistors", Japanese Journal of Applied Physics, 33 (2), 986-990, 1994. https://doi.org/10.1143/JJAP.33.986

  
  

  5. G. Ristić, S. Golubović, M. Pejović, "pMOS dosimeter with two-layer gate oxide operated at zero and negative bias", Electronics Letters, 30 (4), 295-296, 1994. https://doi.org/10.1049/el:19940196  

  
  

  6. S. Golubović, G. Ristić, M. Pejović, S. Dimitrijev, "The role of interface traps in rebound mechanisms", Physica Status Solidi (a), 143 (2), 333-339, 1994. https://doi.org/10.1002/pssa.2211430217

  
  

  7. G. Ristić, S. Golubović, M. Pejović, "P-channel metal-oxide-semiconductor dosimeter fading dependencies on gate bias and oxide thickness", Applied Physics Letters, 66 (1), 88-89, 1995. https://doi.org/10.1063/1.114155

  
  

  8. N. Stojadinović, M. Pejović, S. Golubović, G. Ristić, V. Davidović, S. Dimitrijev, "Effect of radiation-induced oxide-trapped charge on mobility in p-channel MOSFETs", Electronics Letters, 31 (6), 497-498, 1995. http://doi.org/10.1049/el:19950302

  
  

  9. M. Pejović, S. Golubović, G. Ristić, "Temperature-induced rebound in Al-gate NMOS transistors", IEE Proceedings-G: Circuits, Devices and Systems, 142 (6), 413-416, 1995. http://doi.org/10.1049/ip-cds:19952085

  
  

  10. A. Jakšić, G. Ristić, M. Pejović, "Rebound effect in power VDMOSFETs due to latent interface-trap generation", Electronics Letters, 31 (14), 1198-1199, 1995. https://doi.org/10.1049/el:19950818    

  
  

  11. M. Pejović, J. Živković, Č. Milosavljević, G. Ristić, "Formative time determination in nitrogen-filled tube using statistical methods", Japanese Journal of Applied Physics (Part 1), 34 (3), 1652-1656, 1995. https://doi.org/10.1143/JJAP.34.1652

  
  

  12. A. Jakšić, G. Ristić, M. Pejović, “Analysis of the processes in power VDMOSFETs during gamma-ray irradiation and subsequent thermal annealing”, Physica Status Solidi (a), 155 (2), 371-379, 1996. https://doi.org/10.1002/pssa.2211550210

  
  

  13. G. Ristić, S. Golubović, M. Pejović, "Sensitivity and fading of pMOS dosimeters with thick gate oxide", Sensors and Actuators: A. Physical, A 51 (2-3), 153-158, 1996. https://doi.org/10.1016/0924-4247(95)01211-7

  
  

  14. M.M. Pejović, V.Lj. Marković, G.S. Ristić, S. Mekić, "Determination of formative time of electrical breakdown in nitrogen-filled tube", IEE Proceedings - Science, Measurement and Technology, 143 (6), 413-415, 1996. https://doi.org/10.1049/ip-smt:19960650

  
  

  15. M. Pejović, G. Ristić, A. Jakšić, "Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing", Applied Surface Science, 108 (1), 141-148, 1997. https://doi.org/10.1016/S0169-4332(96)00573-9

  
  

  16. M. Pejović, G. Ristić, "Creation and passivation of interface traps in irradiated MOS transistors during annealing at different temperatures", Solid-State Electronics, 41 (5), 715-720, 1997. https://doi.org/10.1016/S0038-1101(96)00252-3

  
  

  17. M. Pejović, A. Jakšić, G. Ristić, B. Baljošević, "Processes in n-channel MOSFETs during postirradiation thermal annealing", Radiation Physics and Chemistry, 49 (5), 521-525, 1997. https://doi.org/10.1016/S0969-806X(96)00181-8

  
  

  18. G. Ristić, A. Jakšić, M. Pejović, “pMOS dosimetric transistors with two-layer gate oxide”, Sensors and Actuators: A. Physical, A 63 (2), 129-134, 1997. https://doi.org/10.1016/S0924-4247(97)01592-6

  
  

  19. M.M. Pejović, V.Lj. Marković, G.S. Ristić, S. Mekić, "Efficiency of copper and gold cathode in initiation of secondary emission in nitrogen-filled tube”, VACUUM - Surface Engineering, Surface Instrumentation and Vacuum Technology, 48 (6), 531-534, 1997. https://doi.org/10.1016/S0042-207X(97)00029-8

  
  

  20. G.S. Ristić, M. Pejović, A. Jakšić, “Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing'', Journal of Applied Physics, 83 (6), 2994-3000, 1998. https://doi.org/10.1063/1.367055

  
  

  21. G.S. Ristić, M.M. Pejović, A.B. Jakšić, “Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases”, Microelectronic Engineering, 45 (3), 1365-1371, 1998. https://doi.org/10.1016/S0167-9317(97)00193-7

  
  

  22. A. Jakšić, M. Pejović, G. Ristić, S. Raković, “Latent interface-trap generation in commercial power VDMOSFETs”, IEEE Trans. Nuclear Science, 45 (3), 1365-1371, 1998. https://doi.org/10.1109/23.685208

  
  

  23. M. Pejović, A. Jaksić, G. Ristić, "The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140 ^oC", Journal of Non-Crystalline Solid, 240, 182-192, 1998. https://doi.org/10.1016/S0022-3093(98)00718-2

  
  

  24. M.M. Pejović, J.P. Karamarković, G.S. Ristić, "The application of time delay method for analysis of processes which initiate electrical breakdown in 1.3 mbar nitrogen", IEEE Transaction of Plasma Science, 26 (6), 1733-1737, 1998. https://doi.org/10.1109/27.747893

  
  

  25. M.M. Pejović, G. S. Ristić, Č.S. Milosavljević, P.G. Vuković, J.P. Karamarković, "Statistical reliability of time delay values for nitrogen-filled tube at pressure of 1.3 mbar", VACUUM- Surface Engineering, Surface Instrumentation and Vacuum Technology, 53 (3-4), 435-440, 1999. https://doi.org/10.1016/S0042-207X(98)00486-2

  
  

  26. M.M. Pejović, G.S. Ristić, Z.Lj. Petrović, "Influence of light from nitrogen-filled lamps on time delay of electrical breakdown in nitrogen-filled tubes", Journal of Physics D: Applied Physics, 32 (13), 1489-1493, 1999.  https://doi.org/10.1088/0022-3727/32/13/308

  
  

  27. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Analysis of postirradiation annealing of n-channel power vertical double-diffused metal-oxide-semiconductor transistors", Journal of Applied Physics, 87 (7), 3468-3477, 2000. https://doi.org/10.1063/1.372368

  
  

  28. A.B. Jakšić, G. S. Ristić, M.M. Pejović, "New experimental evidence of latent interface-trap build up in power VDMOSFETs", IEEE Trans. Nuclear Science, 47 (3), 580-586, 2000. https://doi.org/10.1109/23.856483  

  
  

  29. A.B. Jakšić, M.M. Pejović, G.S. Ristić, "Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs", IEEE Trans. Nuclear Science, 47 (3), 659-666, 2000. https://doi.org/10.1109/23.856495

  
  

  30. A.B. Jakšić, M.M. Pejović, G.S. Ristić, "Properties of latent interface-trap building in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments", Applied Physics Letters, 77 (25), 4220-4222, 2000. https://doi.org/10.1063/1.1336159

  
  

  31. M.M. Pejović, G.S. Ristić, "Nitrogen-filled tube as a sensor of ionizing radiation", Review of Scientific Instruments, 71 (6), 2377-2379, 2000. https://doi.org/10.1063/1.1150662

  
  

  32. M.M. Pejović, G.S. Ristić, "Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay method" Journal of Physics D: Applied Physics, 33 (21), 2786-2790, 2000. https://doi.org/10.1088/0022-3727/33/21/318

  
  

  33. M.M. Pejović, G.S. Ristić, "Analysis of mechanisms which lead to electrical breakdown in argon using the time delay method", Physics of Plasmas, 9 (1), 364-370, 2002. https://doi.org/10.1063/1.1428325

  
  

  34. M.M. Pejović, G.S. Ristić, "Memory effects in argon, nitrogen and hydrogen", IEEE Transaction of Plasma Science, 30 (3), 1315-1319, 2002. https://doi.org/10.1109/TPS.2002.802143

  
  

  35. M.M. Pejović, G.S. Ristić, J.P. Karamarković, "Electrical breakdown in low pressure gases", Journal of Physics D: Applied Physics, Topical Review, 35, R91-R103, 2002. https://doi.org/10.1088/0022-3727/35/10/201

  
  

  36. M.M. Pejović, G.S. Ristić, Č.S. Milosavljević, and M.M. Pejović, "Influence of tube wall material type and tube temperature on the recombination processes of nitrogen ions and atoms in afterglow", Journal of Physics D: Applied Physics, 35 (20), 2536-2542, 2002. https://doi.org/10.1088/0022-3727/35/20/312

  
  

  37. A. Jakšić, G. Ristić, M. Pejović, A. Mohammadzadeh, C. Sudre, and W. Lane, "Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs”, IEEE Trans. Nuclear Science, 49 (3), 1356-1363, 2002. https://doi.org/10.1109/TNS.2002.1039667

  
  

  38. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETs”, Applied Surface Science, 220 (1-4), 181-185, 2003. https://doi.org/10.1016/S0169-4332(03)00818-3

  
  

  39. W. Zhao, G. Ristić, J.A. Rowlands, "X-ray imaging performance of structured cesium iodide scintillators”, Medical Physics, 31 (9), 2594-2605, 2004. https://doi.org/10.1118/1.1782676

  
  

  40. M.M. Pejović, M.M. Pejović, G.S. Ristić, "Gamma and UV radiation effects on breakdown voltage of neon-filled tube", IEEE Transaction of Plasma Science, 33 (3), 1047-1052, 2005. https://doi.org/10.1109/TPS.2005.848601

  
  

  41. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Fowler-Nordheim high electric field stress of power VDMOSFETs", Solid-State Electronics, 49 (7), 1140-1152, 2005. https://doi.org/10.1016/j.sse.2005.05.002

  
  

  42. G. S. Ristić, M.M. Pejović, A.B. Jakšić, "Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealing", Applied Surface Science, 252 (8), 3023-3032, 2006. https://doi.org/10.1016/j.apsusc.2005.05.005

  
  

  43. A.R. Lubinsky, W. Zhao, G. Ristic, J.A. Rowlands, “Screen optics effects on detective quantum efficiency in digital radiography: Zero-frequency effects”, Medical Physics, 33 (5), 1499-1509, 2006. https://doi.org/10.1118/1.2188082

  
  

  44. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Physico-chemical processes in metal–oxide–semiconductor transistors with thick gate oxide during high electric field stress", Journal of Non-Crystalline Solid, 353 (2), 170-179, 2007. https://doi.org/10.1016/j.jnoncrysol.2006.09.020

  
  

  45. G.S. Ristić, "Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors", Journal of Physics D: Applied Physics, Topical Review, 41, 023001 (19pp), 2008. https://doi.org/10.1088/0022-3727/41/2/023001

  
  

  46. M.M. Pejović, J.P. Karamarković, G.S. Ristić, M.M. Pejović, "Analysis of electrically neutral active particles loss in afterglow in krypton at 2.6 mbar pressure", Physics of Plasmas, 15 (1), 013502 - 1-7, 2008. https://doi.org/10.1063/1.2817064

  
  

  47. S. Jha, E.C. Jelenković, M.M. Pejović, G.S. Ristić, M. Pejović, K.Y. Tong, C. Surya, I. Bello and W.J. Zhang, "Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays", Microelectronic Engineering, 86 (1), 37-40, 2009. https://doi.org/10.1016/j.mee.2008.09.001

  
  

  48. T.N. Nešić, G.S. Ristić, J.P. Karamarković, M.M. Pejović, "Modelling of time delay of electrical breakdown for nitrogen-filled tubes at pressures of 6.6 and 13.3 mbar in the increase region of the memory curve", Journal of Physics D: Applied Physics, 41 (22), 225205 (10 pp), 2008. https://doi.org/10.1088/0022-3727/41/22/225205

  
  

  49. G.S. Ristić, "Thermal and UV annealing of irradiated pMOS dosimetric transistors", Journal of Physics D: Applied Physics, 42 (13), 135101 (12pp), 2009. https://doi.org/10.1088/0022-3727/42/13/135101

  
  

  50. E.V. Jelenkovic, G.S. Ristic, M.M. Pejovic, M.M. Jevtic, K.J. Shrawan, M. Videnovic-Misic, M. Pejovic, and K.Y. Tong, "Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation", Journal of Physics D: Applied Physics, 44 (1), 015101 (7 pp), 2011. https://doi.org/10.1088/0022-3727/44/1/015101

  
  

  51. G.S. Ristić, N.D. Vasović, "Interface and oxide state behaviors of commercial n-channel power MOSFETs during high electric field stress and thermal annealing at 150 ^oC", Semiconductor Science & Technology, 49 (7), 1140-1152, 2011. https://doi.org/10.1088/0268-1242/26/8/085019

  
  

  52. G.S. Ristić, N.D. Vasović, M. Kovačević, A.B. Jakšić, "The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)", Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atom, 269, 2703-2708, 2011. https://doi.org/10.1016/j.nimb.2011.08.015

  
  

  53. G.S. Ristić, "Defect behaviors during high electric field stress of p-channel power MOSFETs ", IEEE Trans. on Device and Materials Reliability, 12 (1), 94-100, 2012. https://doi.org/10.1109/TDMR.2011.2168399

  
  

  54. S. Savovic, A. Djordjevich, G. Ristic, "Numerical solution of the transport equation describing the radon transport from subsurface soil to buildings", Radiation Protection Dosimetry, 150 (2), 213-216, 2012. https://doi.org/10.1093/rpd/ncr397

  
  

  55. M. Todorović, N.D. Vasović, G.S. Ristić, "A system for gas electrical breakdown time delay measurements based on a microcontroller", Measurement Science & Technology, 23 (1) 015901 (9pp), 2012. https://doi.org/10.1088/0957-0233/23/1/015901

  
  

  56. N.D. Vasović, G.S. Ristić, "A new microcontroller-based RADFET dosimeter reader", Radiation Measurements, 47 (4), 272-276, 2012. https://doi.org/10.1016/j.radmeas.2012.01.017

  
  

  57. N.D. Vasović, G.S. Ristić, "A switching system based on microcontroller for successive applying of MGT and CPT on MOSFETs", Measurement, 45, 1922-1926, 2012. https://doi.org/10.1016/j.measurement.2012.03.011

  
  

  58. D. Sokolovic, B. Djordjevic, G. Kocic, P. Babovic, G. Ristic, Z. Stanojkovic, D.M. Sokolovic, A. Veljkovic, A. Jankovic, Z. Radovanovic, "The melatonin effect on body mass and behaviour of rats during exposure to microwave radiation from mobile phone", Bratislava Medical Journal, 113 (5), 265-269, 2012. https://doi.org/10.4149/BLL_2012_062

  
  

  59. G.S. Ristić, N.D. Vasović, A.B. Jakšić, "The fixed oxide traps modelling during isothermal and isochronal annealing of irradiated RADFETs", Journal of Physics D: Applied Physics, 45, 305101 (11pp), 2012. https://doi.org/10.1088/0022-3727/45/30/305101

  
  

  60. M.S. Andjelković, G.S. Ristić, Feasibility study of a current mode gamma radiation dosimeter based on a commercial PIN photodiode and a custom made auto-ranging electrometer, Nuclear Technology & Radiation Protection, 28 (1), 73-83, 2013. https://doi.org/10.2298/NTRP1301073A  

  
  

  61. Č.A. Maluckov, M.K. Radović, S.A. Rančev, G.S. Ristić, J.P. Karamarković, "The electrical breakdown time delay distributions in “GE 155/500” gas diode (starter)", Romanian Reports in Physics, 65 (4), 1373–1383, 2013.

  
  

  62. G.S. Ristic, M.S. Andjelkovic, A.B. Jaksic, "The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses", Applied Radiation and Isotopes, 102, 29-34, 2015. https://doi.org/10.1016/j.apradiso.2015.04.009 
  

  
  

  63. M.S. Andjelković, G.S. Ristić, A.B. Jakšić, "Using RADFET for the real-time measurement of gamma radiation dose rate", Measurement Science & Technology, 26 (2), 025004 (12pp), 2015. https://doi.org/10.1088/0957-0233/26/2/025004

  
  

  64. M.S. Andjelković, G.S. Ristić, "Current mode response of phototransistors to gamma radiation", Radiation Measurements, 75, 29-38, 2015. https://doi.org/10.1016/j.radmeas.2015.03.005

  
  

  65. D.T. Sokolovic, B.S. Djordjevic, G.M. Kocic, T.J. Stoimenov, Z.A. Stanojkovic, D.M. Sokolovic, A.R. Veljkovic, G.S. Ristic, M. Despotovic, D. Milisavljevic, R.J. Jankovic, I.I. Binic, "The effects of melatonin on oxidative stress parameters and DNA fragmentation in testicular tissue of rats exposed to microwave radiation", Advances in Clinical and Experimental Medicine, 24 (3), 429-436, 2015. https://doi.org/10.17219/acem/43888

  
  

  66. M.S. Andjelković, V. Petrović, Z. Stamenković, G.S. Ristić, G.S. Jovanović, "Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch", Journal of Electronic Testing-Theory and Applications, 31 (3), 275-289, 2015. https://doi.org/10.1007/s10836-015-5529-1

  
  

  67. G.S. Ristić, M.S. Andjelković, S. Savović, "The isochronal annealing of irradiated n-channel power VDMOSFETs", Nuclear Instruments and Methods in Physics Research B, 366, 171-178, 2016. https://doi.org/10.1016/j.nimb.2015.11.003

  
  

  68. Č.A. Maluckov, M.K. Radović, G.S. Ristić, "Experimental investigations of commercial gas discharge tube “Osram St 111” using time lag measuring method", Electrical Engineering, 99, 63-72, 2017. https://doi.org/10.1007/s00202-016-0391-4

  
  

  69. S. Ilić, A. Jevtić, S. Stanković, G. Ristić, "Floating-gate MOS transistor with dynamic biasing as a radiation sensor", Sensors, 20 (11), 3329, 2020. https://doi.org/10.3390/s20113329

  
  

  70. G.S. Ristic, M.S. Andjelković, R. Duane, A.J. Palma, A.B. Jakšić, Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm, Sensors and Materials, 33 (6), 2109–2116, 2021. https://doi.org/10.18494/SAM.2021.3425

  
  

  71. G.S. Ristic, S.D. Ilic, R. Duane, M.S. Andjelkovic, A.J. Palma, A.M. Lallena, M.D. Krstic, S.J. Stankovic, A.B. Jaksic, Radiation sensitive MOSFETs irradiated with various positive gate biases, Journal of Radiation Research and Applied Sciences, 14 (1), 353–357, 2021; https://doi.org/10.1080/16878507.2021.1970921

  
  

  72. S.D. Ilić, M.S. Andjelković, R. Duane, A.J. Palma, M. Sarajlić, S. Stanković, G.S. Ristić, Recharging process of commercial floating-gate MOS transistor in dosimetry application, Microelectronics Reliability, 126, 114322, 2021. https://doi.org/10.1016/j.microrel.2021.114322

  
  

  73. G.S. Ristic, S.D. Ilic, M.S. Andjelkovic, R. Duane, A.J. Palma, A.M. Lalena, M.D. Krstic, A.B. Jaksic, Sensitivity and fading of irradiated RADFETs with different gate voltages, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1029, 166473, 2022; https://doi.org/10.1016/j.nima.2022.166473

  
  

  74. M. Andjelkovic, A. Simevski, J. Chen, O. Schrape, Z. Stamenkovic, M. Krstic, S. Ilić, G. Ristić, A. Jaksic, N. Vasovic, R. Duane, A. J. Palma, A. M. Lallena, M. A. Carvajal Rodríguez, A Design Concept for Radiation Hardened RADFET Readout System for Space Applications, Microprocessors and Microsystems, 104486, 2022; https://doi.org/10.1016/j.micpro.2022.104486

  
  

  75. G.S. Ristić, S.D. Ilić, S. Veljković, A.S. Jevtić, S. Dimitrijević, A.J. Palma, S. Stanković, M.S. Andjelković, Commercial P-Channel Power VDMOSFET as X-ray Dosimeter, Electronics, 11(6), 918, 2022; https://doi.org/10.3390/electronics11060918

  
  

  76. G.S. Ristić, M.S. Andjelković, R. Duane, A.B. Jakšić, Fading of pMOS dosimeters over a long period of time, Micro Nano Lett., 1–4, 2022; http://doi.org/10.1049/mna2.12119
  

  
  

  77. S. Veljkovic, N. Mitrovic, V. Davidovic, S. Golubovic, S. Djoric-Veljkovic, A. Paskaleva, D. Spassov, S. Stankovic, M. Andjelkovic, Z. Prijic, I. Manic, A. Prijic, G. Ristic, D. Dankovic, Response of Commercial p-Channel Power VDMOS Transistors to Irradiation and Bias Temperature Stress, Journal of Circuits, Systems and Computers, 31(18)  2240003, 2022; https://doi.org/10.1142/S0218126622400035

  
  

  78. M. Andjelkovic, M. Marjanovic, J. Chen, S. Ilic, G. Ristic, M. Krstic, PS-BBICS: Pulse stretching bulk built-in current sensor for on-chip measurement of single event transients, Microelectronics Reliability, 138, 114726, 2022; https://doi.org/10.1016/j.microrel.2022.114726

  
  

  79. M. Andjelkovic, M. Marjanovic, B. Drasko, C. Calligaro, O. Schrape, U. Gatti, F.A. Kuentzer, S. Ilic, G. Ristic, M. Krstic, Analysis of Single Event Transient Effects in Standard Delay Cells Based on Decoupling Capacitors, Journal of Circuits, Systems and Computers, 31 (18), 2240007, 2022; http://doi.org/10.1142/S0218126622400072

  
  

  80. G. Kramberger, B. Hiti, V. Cindro, A. Howard, I. Mandić, M. Mikuž, M. Petek, A. Ristić, G. Ristić, Gain dependence on free carrier concentration in LGADs, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1046, 167669, 2023; https://doi.org/10.1016/j.nima.2022.167669

  
  

  81. A. Pousibet-Garrido, P. Escobedo, D. Guirado, G.S. Ristic, A.J. Palma, M.A. Carvajal, Batteryless NFC dosimeter tag for ionizing radiation based on commercial MOSFET, Sensors and Actuators A: Physical, 354, 114295, 2023; https://doi.org/10.1016/j.sna.2023.114295

• Radovi u ostalim časopisima:

  1. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Isothermal and isochronal annealing of γ-ray irradiated-channel power VDMOS transistor", Facta Universitatis, series: Physics, Chemistry and Technology, 2 (1), 47-61, 1999.

  
  

  2. M.M. Pejović, G.S. Ristić, J.P. Karamarković, "Electrical breakdonwn time delay in gases at low pressures", Facta Universitatis, series: Physics, Chemistry and Technology, 2 (2), 63-78, 2000.

  
  

  3. D. Krstić, D. Zigar, D. Sokolović, B. Đinđić, B. Đorđević, M. Dunjić, G. Ristić, "The study of biological effects of electromagnetic mobile phone radiation on experimental animals by combining numerical modelling and experimental research", Microwave Review, 18 (2), 9-16, 2012.

  
  

  4 D. Sokolović, B. Djindjić, D. Krstić, V. Marković, G. Ristić, D.M. Sokolović, M. Golubović, B. Djordjević, M. Dunjić, D. Popović, T. Karuntanović, N. Tatar, P. Babović, "The effect of melatonin on the catabolism of polyamines in the rat thymus during the exposure to microwave radiation", Acta Medica Medianae, 57 (4), 4-21, 2018. https://doi.org/10.5633/amm.2018.0402

• Radovi na naučnim skupovima međunarodnog značaja:

   1. M. Pejović J. Živković, G. Ristić, "Determination of Formative Time in Nitrogen for Small Values of the Afterglow Period", Proc. XVI Summer School and International Symposium on the Physics of Ionized Gases (16th SPIG), Belgrade, pp. 248-250, 1993.

  
  

  2. M. M. Pejović, G. Ristić, V. Lj. Marković, S. Mekić, "Laue distribution of time delay of electrical breakdown in nitrogen for 1 % overvoltage", Proc. XVII Summer School and International Symposium on the Physics of Ionized Gases (17th SPIG), Belgrade, pp. 240-243 1994.

  
  

  3. A. Jakšić, G. Ristić, M. Pejović, “Effects of gamma-irradiation and postirradiation thermal annealing in power VDMOSFETs”, Proc. 20th International Conference on Microelectronics (MIEL’95), Niš, 1, pp. 241-246, 1995. https://doi.org/10.1109/ICMEL.1995.500872

  
  

  4. A. Jakšić, G. Ristić, M. Pejović, “Latent interface-trap generation during thermal annealing of gamma-ray irradiated power VDMOSFETs”, Proc. 18th International Semiconductor Conference (CAS’95), Sinaia, Romania, pp. 215-218, 1995.

  
  

  5. M. M. Pejović, G. Ristić, V. Lj. Marković and S. Mekić, "Efficiency of different secondary emission mechanisms in initiation of electrical breakdown", Proc. XVIII Summer School and Internation. Symposium on the Physics of Ionized Gases (18th SPIG), Kotor, pp. 348-351, 1996.

  
  

  6. A. Jakšić, M. Pejović, G. Ristić, S. Raković, "Latent interface-trap generation in commercial power VDMOSFETs", Proc. 4^th European Confer. Radiations and its Effects on Components and Systems (RADECS 1997), Cannes, France, pp. 36-42, 1997. https://doi.org/10.1109/RADECS.1997.698837

  
  

  7. A. Jakšić, M. Pejović, G. Ristić, "Post-irradiation effects in commercial power VDMOSFETs", Proc. 4th International Seminar on Power Semiconductor (ISPS'98), Prague, 1998.

  
  

  8. M. M. Pejović, G. S. Ristić, J. P. Karamarković, "Kinetics of nitrogen ions and atoms in afterglow", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (19th SPIG), Zlatibor, pp. 433-436, 1998.

  
  

  9. J. P. Karamarković, M. M. Pejović, Z. M. Stojiljković, G. S. Ristić, "Distribution of time delay in krypton-filled tube at 2. mbar", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (19th SPIG), Zlatibor, pp. 437-440, 1998.

  
  

  10. G. S. Ristić, A. B. Jakšić, M. M. Pejović, "Latent interface-trap buildup in power VDMOSFETs: new experimental evidence and numerical simulation", Proc. 5^th European Confer. Radiations and their Effects on Devices and Systems (RADECS '99), pp. H14 - H17 , 1999.

  
  

  11. A. B. Jakšić, M. M. Pejović, G. S. Ristić, "Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs ", Proc. 5^th European Confer. Radiations and their Effects on Devices and Systems (RADECS '99), pp. K17-K20 , 1999.

  
  

  12. A.B. Jakšić, M.M. Pejović, G.S. Ristić, "Post-irradiation behaviour of commercial power VDMOSFETs", Proc. 22nd International Conference on Microelectronics (MIEL 2000), Niš, 1, pp. 343-346, 2000. https://doi.org/10.1109/ICMEL.2000.840585

  
  

  13. A. Jaksic, G. Ristic, M. Pejovic, A. Mohammadzadeh, C. Sudre, W. Lane, "Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs", Proc. 6^th European Confer. Radiations and its Effects on Components and Systems (RADECS 2001), Grenoble, France, 1 (2), pp. 57-65, 2001. https://doi.org/10.1109/RADECS.2001.1159259

  
  

  14. A. Jakšić, G. Ristić, M. Pejović, A. Mohammadzadeh, W. Lane “Characterisation of radiation response of 400 nm implanted gate oxide RADFETs”, Proc. 23th International Conference on Microelectronics (MIEL 2002), Niš, 2, pp. 727-730, 2002. https://doi.org/10.1109/MIEL.2002.1003360

  
  

  15. G. Ristić, M. Pejović, A. Jakšić, "Comparative study of the effects of irradiation and high electric field stress in commercial n-channel power VDMOSFETs", Proc. RADECS 2002 Workshop, Radiation Effects on Devices and Systems, Padova, Italy, pp. 33-35, 2002.

  
  

  16. E. N. Živanović, M. M. Pejović, G. S. Ristić, "Influence of gamma and UV radiations on memory curve of nitrogen-filled tube", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (22th SPIG), National park “Tara”, Serbia, pp. 345-348, 2004.

  
  

  17. J. P. Karamarković, G. S. Ristić, M. M. Pejović, E. N. Živanović, N. T. Nešić, "Modeling of memory curves in nitrogen-filled diode with copper and molybdenum electrodes", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (22th SPIG), National park “Tara”, Serbia, pp. 353-356, 2004.

  
  

  18. M. M. Pejović, M. M. Pejović, G. S. Ristić, "A breakdown voltage measurement of neon-filled tube using digital system", Proc. XIX Summer School and International Symposium on the Physics of Ionized Gases (22th SPIG), National park “Tara”, Serbia, pp. 409-412, 2004.

  
  

  19. W. Zhao, G. Ristić, J. A. Rowlands, “Inherent imaging performance of cesium iodide scintillators”, Proc. SPIE - The International Society for Optical Engineering, 5368 (1), p. 211-220, 2004. https://doi.org/10.1117/12.536865

  
  

  20. E.V. Jelenković, S. Jha, K.Y. Tong, G.S. Ristić, "Positive bias temperature stress in irradiated and non-irradiated thin film transistors (TFTs)", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 79-80, 2012.

  
  

  21. D. Krstić, D. Nikezić, G.S. Ristić, "Calculation of effective dose in ORNL phantoms series due to natural radioactivity in building materials", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 51-53, 2012.

  
  

  22. D. Krstić, D. Nikezić, G.S. Ristić, "Modeling a thyroid of an ORNL phantom as an input file for MCNP5/X", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 55-57, 2012.

  
  

  23. M. Anđelković, G.S. Ristić, "A pulse mode gamma radiation monitoring system", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 109-112, 2012.

  
  

  24. M. Anđelković, G.S. Ristić, "An autoranging electrometer for current mode dosimetry", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 113-116, 2012.

  
  

  25. U. Jovanović, G. S. Ristić, "Realization of radiation low-cost multichannel analyzer", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 117-120, 2012.

  
  

  26. M. Todorović, G. S. Ristić, "A new heating system for thermoluminescence reader", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 121-124, 2012.

  
  

  27. G.S. Ristić, M. Anđelković, A.B. Jakšić, "Sensitivity of pMOS dosimeters with various gate oxide thickness", Proc. The First International Conference on Radiation and Dosimetery in Various Fields of Researh (RAD 2012), Niš, Serbia, pp. 125-128, 2012.

  
  

  28. Z. Stamenkovic, N.D. Vasovic, G.S. Ristic, , "Automatic and reliable electrical characterization of MOSFETs", Proc. 17th IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS), Warsaw, Poland, pp. 262-265, 2014.https://doi.org/10.1109/DDECS.2014.6868804

  
  

  29. M. Andjelkovic, V. Petrovic, Z. Stamenkovic, G. Ristic, G. Jovanovic, "Simulation-based analysis of the single event response of a single event latchup protection switch," In the Proceedings of the IEEE International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS), Belgrade, Serbia, pp. 255-258, 2015. https://doi.org/10.1109/DDECS.2015.63

  
  

  30. M. Andjelkovic, A. Ilic, V. Petrovic, M. Nenadovic, Z. Stamenkovic, G. Ristic, “SET Response of a SEL Protection Switch for 130 and 250 nm CMOS Technologies,” Proc. 22nd IEEE International Symposium on On-line Testing and Robust System Design (IOLTS), Sant Feliu de Guixols, Spain, pp. 185-190, 2016. https://doi.org/10.1109/IOLTS.2016.7604695

  
  

  31. M.Ž. Jeremić, M. Matović, S. Pantović, D. Nikezić, G. Ristić, D. Krstić, "Compartment biokinetic model for 90Y-DOTATOC", Proc. the Fifth International Conference on Radiation and Applications in Various Fields of Researh (RAD 2017), RAD Conference Proceedings, 2, pp. 163-166, 2017. https://doi.org/10.21175/RadProc.2017.33

  
  

  32. M. Andjelkovic, A. Simevski, J. Chen, O. Schrape, Z. Stamenkovic, M. Krstic, S. Ilic, L. Spahic, L. Kostic, G. Ristic, A. Jaksic, A. J. Palma, A. Lallena, M. A. Carvaja, "Design of Radiation Hardened RADFET Readout System for Space Applications," 2020 23rd Euromicro Conference on Digital System Design (DSD), Kranj, Slovenia, 2020, pp. 484-488. https://doi.org/10.1109/DSD51259.2020.00082

  
  

  33. L. Spahić, S. Ilić, M. Anđelković, A. J. Palma, G. S. Ristić, "Application of Transimpedance Amplifiers in PIN Photodiode Dosimetry", in Proc. 32nd International Conference on Microelectronics, Nis, Serbia, September 12-14, 2021, pp. 317-320.  https://doi.org/10.1109/MIEL52794.2021.9569069 

  
  

  34. S. D. Ilić, M. S. Andjelković, M. A. Carvajal, A. M. Lallena, M. Krstić, S. Stanković, G. S. Ristić, "Power Silicon Carbide Schottky Diodes as Current Mode γ-Radiation Detectors", in Proc. 32nd International Conference on Microelectronics, Nis, Serbia, September 12-14, 2021, pp. 337-340. https://doi.org/10.1109/MIEL52794.2021.9569076

  
  

  35. G. S. Ristić, A. S. Jevtić, S. D. Ilić, S. Dimitrijević, S. Veljković, A. J. Palma, S. Stanković, M. S. Andjelković, "Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation", in Proc. 32nd International Conference on Microelectronics, Nis, Serbia, September 12-14, 2021, pp. 341-344.  https://doi.org/10.1109/MIEL52794.2021.9569096
  

  
  

  36. M. Marjanović, U. Gürer, N. Mitrović, O. Yilmaz, D. Danković, E. Budak, G. Ristić, E. Yilmaz, "SPICE Modeling of RADFETs with Different Gate Oxide Thicknesses", 2023 IEEE 33rd International Conference on Microelectronics (MIEL), Nis, Serbia, 2023, pp. 1-4. https://doi.org/10.1109/MIEL58498.2023.10315808

  
  

  37. M. Andjelkovic, J. Chen, R. T. Syed, M. Marjanovic, G. Ristic, M. Krstic, "Prediction of Generated Single Event Transient Pulse Width Using Artificial Intelligence Methods", 2023 IEEE 33rd International Conference on Microelectronics (MIEL), Nis, Serbia, 2023, pp. 1-4. https://doi.org/10.1109/MIEL58498.2023.10315809 
  

  
  

  38. M. Andjelkovic, R. T. Syed, M. Pavlovic, F. Vargas, T. Nikolic, G. Ristic, M. Krstic, "Voltage Glitch Filter and Detector with Self-Checking Capability for FPGA Implementation", 2023 IEEE 33rd International Conference on Microelectronics (MIEL), Nis, Serbia, 2023, pp. 1-4, https://doi.org/10.1109/MIEL58498.2023.10315811

  
  

  39. A. Jevtić, G. Ristić, "Utilisation of Raspberry Pi 4 and RP2040 microcontroller for PID measurement and control", in Proc. 2023 IEEE 33rd International Conference on Microelectronics (MIEL), Nis, Serbia, 2023, pp. 1-6. https://doi.org/10.1109/MIEL58498.2023.10315870

  
  

  40. N. Mitrović, D. Guirado, D. Danković, A. J. Palma, G. Ristić, M. A. Carvajal, "Consecutive Irradiation and Thermal Annealing of Commercial P-Channel Power VDMOSFETs", 2023 IEEE 33rd International Conference on Microelectronics (MIEL), Nis, Serbia, 2023, pp. 1-4, https://doi.org/10.1109/MIEL58498.2023.10315908

  
  

  41. S. Veljković, N. Mitrović, S. Djorić-Veljković, V. Davidović, I. Manić, E. Živanović, S. Stanković, M. Andjelković, G. Ristić, A. Paskaleva, D. Spassov, D. Danković, "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation", 2023 IEEE 33rd International Conference on Microelectronics (MIEL), Nis, Serbia, 2023, pp. 1-4; https://doi.org/10.1109/MIEL58498.2023.10315932

  
  

  42. S. Veljković, G. Ristić, D. Danković, A. J. Palma, M. Andjelković, R. Duane, "Using TCAD Simulations to Verify the McWhorter Method for Assessing Trapped Charge in Dielectric", 2023 IEEE 33rd International Conference on Microelectronics (MIEL), Nis, Serbia, 2023, pp. 1-4. https://doi.org/10.1109/MIEL58498.2023.10315943

  
  

  43. M. Andjelkovic, J. Chen, R.T. Syed, F. Vargas, M. Ulbricht, M. Krstic, S. Ilic, M. Marjanovic, S. Veljkovic, N. Mitrovic, D. Dankovic, G. Ristic, R. Duane, N. Vasovic, A. Jaksic, A.J. Palma, A.M. Lallena, M.A. Carvajal, "Towards a Smart Multi-Sensor Ionizing Radiation Monitoring System", 2023 26th Euromicro Conference on Digital System Design (DSD), Golem, Albania, 2023, pp. 286-293; https://doi.org/10.1109/DSD60849.2023.00048

• Radovi na domaćim naučnim skupovima:

  1. G. Ristić, S. Golubović, M. Pejović, "Spontani oporavak ozračenih MOS tranzistora sa Al ‑ gejtom", Zbornik radova I srpske konferencije o mikroelektronici i optoelektronici, MIOPEL, 1. 2. 4., str. 1 - 5, Beograd, 1992.

  
  

   2. S. Golubović, G. Ristić, S. \orić, N. Stojadinović, "Efekti gama-zračenja kod VDMOS tranzistora snage", Zbornik radova I srpske konferencije o mikroelektronici i optoelektronici, MIOPEL, 1. 2. 5., str. 1 - 5, Beograd, 1992.

  
  

   3. G. Ristić, S. Golubović, M. Pejović, "Uticaj UV-zračenja i povišene temperature na radijacione defekte kod NMOS tranzistora", Zbornik radova XXXVII konferencije ETANA-a, sveska IX, str. 99-104, Beograd, 1993.

  
  

   4. S. Golubović, G. Ristić, M. Pejović, M. Odalović, "Termički oporavak NMOS tranzistora ozračenih gama zračenjem", Zbornik radova XXXVII konferencije ETANA‑a, sveska IX, str. 105-109, Beograd, 1993.

  
  

   5. M. Pejović, J. Živković, G. Ristić, "Određivanje vremena formiranja pražnjenja u cevima punjenim azotom korišćenjem statističkih metoda", Zbornik radova XXXVII konferencije ETANA-a, sveska IX, str. 185-190, Beograd, 1993.

  
  

  6. A. Jakšić, G. Ristić, M. Pejović, "Uticaj polarizacije gejta na efekte g-zračenja kod VDMOS tranzistora snage", Zbornik radova XXXVIII konferencije ETRAN-a, sveska IV, str. 23-24, Niš, 1994.

  
  

  7. M. Pejović, G. Ristić, S. Golubović, "Oporavak ozračenih VDMOS tranzistora snage na povišenoj temperaturi", Zbornik radova XXXVIII konferencije ETRAN-a, sveska IV, str. 25-26, Niš, 1994.

  
  

   8. G. Ristić, M. Pejović, "Radijaciono osetqivi PMOS tranzistor kao senzor i dozimetar jonizujućeg zračenja", Zbornik radova IX Kongresa fizičara Jugoslavije, str. 753-756, Petrovac, maj 1995.

  
  

   9. A. Jakšić, G. Ristić, "Uticaj gama-zračenja i oporavka na napon praga VDMOS tranzistora snage", Zbornik radova XXXIX Konferencije ETRAN-a, sveska IV, str. 136-138, Zlatibor, jun 1995.

  
  

  10. M. Pejović, G. Ristić, "Temperaturska zavisnost oporavka ozračenih n-kanalnih VDMOS tranzistora snage", Zbornik radova XXXIX Konferencije ETRAN-a, sveska IV, str. 143-146 , Zlatibor, jun 1995.

  
  

  11. M. M. Pejović, G. S. Ristić, C. Q. Marković, S. Mekić, "Određivanje vremena formiranja pražnjenja u azotu iz Laue-ovih raspodela", Zbornik radova IX Kongresa fizičara Jugoslavije, str. 429-431, Petrovac, maj 1995.

  
  

  12. A. Jakšić, G. Ristić, M. Pejović, "Uticaj polarizacije gejta na odžarivanje ozračenih VDMOS tranzistora snage", Zbornik radova XL Konferencije ETRAN-a, str. 90-93, Budva, jun 1996.

  
  

  13. S. Raković, A. Jakšić, G. Ristić, M. Pejović, "Ponašanje PMOS tranzistora male geometrije tokom ozračivanja i kasnijeg odžarivanja na različitim temperaturama", Zbornik radova XLI Konferencije ETRAN-a, str. 65-68, Zlatibor, jun 1997.

  
  

  14. M.M. Pejović, J.P. Karamarković, G. S. Ristić, "Statistička analiza vremena kašnjenja u azotu na pritisku 1.3 mbar i prenaponu od 3%", Zbornik radova X Kongresa fizičara Jugoslavije, Knjiga II, str. 607-610, Vrnjačka Banja, 2000.

  
  

  15. G.S. Ristić, A.B. Jakšić, M.M. Pejović, "Osetljivost dozimetrijskih PMOS tranzistora na X-zračenje", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 8-157 - 8-160, Petrovac na Moru, 3-5. jun 2004.

  
  

  16. G.S. Ristić, M.M. Pejović, A.B. Jakšić "Naprezanje VDMOS tranzistora snage jakim električnim poljem", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 8-161 - 8-164, Petrovac na Moru, 3-5. jun 2004.

  
  

  17. G.S. Ristić, M.M. Pejović, A.B. Jakšić, "Termalni oporavak VDMOS tranzistora snage nakon naprezanja jakim električnim poljem", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 8-165 - 8-168, Petrovac na Moru, 3-5. jun 2004.

  
  

  18. J.P. Karamarković, G.S. Ristić, N.T. Nešić, "Modelovanje memorijskih krivih u azotu na 1.33 mbar", Zbornik radova sa Kongresa fizičara Srbije i Crne Gore, str. 3-367 - 3-370, Petrovac na Moru, 3-5. jun 2004.

  
  

  19. S. Raković, G. Ristić, M. Pejović, "Uticaj povišene temperature na ponašanje VDMOS tranzistora snage tokom naprezanja jakim električnim poqem", Zbornik radova XLVIII Konferencije za ETRAN, IV Sveska, str. 128-131, Čačak, 6-10 jun 2004.

  
  

  20. U. Jovanović, M. Anđelković, G. S. Ristić, Realizacija dva pojačavača na bazi integracionog pojačanja za merenje niskih nivoa jednosmernih struja u dozimetrijskim aplikacijama, Zbornik radova XXVI Simpozijuma Društva za zaštitu od zračenja Srbije i Crne Gore, str. 344-348, Tara, 12-14. oktobar 2011.

  
  

  21. M. Anđelković, U. Jovanović, G. S. Ristić, Realizacija dva pojačavača na bazi transimpedansnog pojačanja za merenje niskih nivoa jednosmernih struja u dozimetrijskim aplikacijama, Zbornik radova XXVI Simpozijuma Društva za zaštitu od zračenja Srbije i Crne Gore, str. 349-353, Tara, 12-14. oktobar 2011.

  
  

  22. M. Andjelkovic, U. Jovanovic, G. S. Ristic, Comparative Analysis of Two Techniques for Measuring Low Level Photocurrents, Proc. IEEESTEC – 4th International Students’ Projects Conference, pp. 29-32, Nis, November 30, 2011.

  
  

   

• Patenti:

  Naučno-tehnološki projekti

  
  

  Međunarodni projekti

  
  

  Rukovodilac projekata:

  
  

  2019 – 2023 Enhancement of scientific excellence and innovation potential in electronic instrumentation for ionizing radiation environments (ELICSIR), Horizon 2020 – TWINNING projekat, realizuje se sa partnerima iz Nemačke, Irske i Španije

  
  

  2015:   Development of modeling and simulation framework for characterization of single event effects in CMOS integrated circuits, bilateralni projekat, realizovan sa institutom  IHP, Nemačka

  
  

  2015:   Study of silicon detectors and structures by using Scanning Transient Current (STC) Technique, bilateralni projekat, realizovan sa institutom Jozef Stefan, Slovenija

  
  

  2014:   Verification and test of fault-tolerant circuits, bilateralni projekat, realizovan sa institutom  IHP, Nemačka

  
  

  Lokalni rukovodilac međunarodnih projekata:

  
  

  2023 – present High-k Dielectric RADFET for Detection of RN Treats - NATO projekat, realizuje se sa partnerom iz Turske

  
  

  2008 – 2012 Joint research on various types of radiation dosimeters (RADDOS), FP7 – REGPOT projekat, Evropska komisija

  
  

  Nacionalni projekti

  
  

  Rukovodilac projekta:

  
  

  2011 –  Zajednička istraživanja merenja i uticaja jonizujućeg i UV zračenja u oblasti medicine i zaštite životne sredine, uključeno je 11 fakulteta i 4 univerziteta iz Srbije

  
  

  Učesnik na projektima:

  
  

  2006-2010 Pretprobojni i posleprobojni procesi u gasovima na niskim pritiscima i defekti u poluprovodničkim materijalima izazvani jonizujućim zračenjem i električnim poljem

  
  

  2002-2005 Proboj u gasovima na niskim pritiscima i neke karakteristike poluprovodničkih materijala

  
  

  1996-2000 Fizički procesi u jonizovanim gasovima i kondenzovanom stanju materije

  
  

  1995-1997 Poluprovodnički tranzistorski mikrodozimetar gama i X zračenja

  
  

  1993-1995 Razvoj senzora zračenja